2sa1593/2sc4135 no.2511-1/9 applications ? power supplies, relay derivers, lamp drivers features ? adoption of fbet, mbit processes ? high breakdown voltage and large current capacity ? fast switching speed ? small and slim package permitting 2sa1593/2sc4135-applied sets to be made more compact speci cations ( ): 2sa1593 absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--)120 v collector-to-emitter voltage v ceo (--)100 v emitter-to-base voltage v ebo (--)6 v collector current i c (--)2 a collector current (pulse) i cp (--)3 a continued on next page. package dimensions unit : mm (typ) package dimensions unit : mm (typ) 7518-003 7003-003 ordering number : en2511b 80812 tkim/n1003tn (kt)/8219mo/4097ta, ts sanyo semiconductors data sheet 2sa1593/2sc4135 pnp/npn epitaxial planar silicon transistors high-voltage switching applications http://www.sanyosemi.com/en/network/ product & package information ? package : tp ? package : tp-fa ? jeita, jedec : sc-64, to-251 ? jeita, jedec : s c-63, to-252 ? minimum packing quantity : 500 pcs./bag ? minimum packing quantity : 700 pcs./reel marking packing type (tp-fa) : tl electrical connection (tp, tp-fa) tl 6.5 5.0 2.3 0.5 12 4 3 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.0 7.5 1.6 0.8 5.5 1.5 1 : base 2 : collector 3 : emitter 4 : collector sanyo : tp 6.5 5.0 2.3 0.5 12 4 3 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.0 2.5 5.5 1.5 0.8 0 to 0.2 1 : base 2 : collector 3 : emitter 4 : collector sanyo : tp-f a 2sa1593s-e 2sa1593t-e 2sc4135s-e 2sc4135t-e 2sa1593s-tl-e 2sa1593t-tl-e 2sc4135s-tl-e 2sc4135t-tl-e a1593 c4135 lot no. lot no. rank rank 2,4 3 1 2sc4135 2,4 3 1 2sa1593
2sa1593/2sc4135 no.2511-2/9 continued from preceding page. parameter symbol conditions ratings unit collector dissipation p c 1w tc=25 c15w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =(--)100v, i e =0a (--)100 na emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)100 na dc current gain h fe v ce =(--)5v, i c =(--)100ma 100* 400* gain-bandwidth product f t v ce =(--)10v, i c =(--)100ma 120 mhz output capacitance cob v cb =(--)10v, f=1mhz (25)16 pf collector-to-emitter saturation voltage v ce (sat) i c =(--)1a, i b =(--)100ma (--0.22)0.13 (--0.6)0.4 v base-to-emitter saturation voltage v be (sat) i c =(--)1a, i b =(--)100ma (--)0.85 (--)1.2 v collector-to-base breakdown voltage v (br)cbo i c =(--)10 a, i e =0a (--)120 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)100 v emitter-to-base breakdown voltage v (br)ebo i e =(--)10 a, i c =0a (--)6 v turn-on time t on see speci ed test circuit. (80)80 ns storage time t stg (750)1000 ns fall time t f (40)50 ns * : the 2sa1593/2sc4135 are classi ed by 100ma h fe as follows : rank r s t h fe 100 to 200 140 to 280 200 to 400 switching time test circuit ordering information device package shipping memo 2sa1593s-e tp 500pcs./bag pb free 2sa1593t-e tp 500pcs./bag 2sc4135s-e tp 500pcs./bag 2sc4135t-e tp 500pcs./bag 2sa1593s-tl-e tp-fa 700pcs./reel 2sa1593t-tl-e tp-fa 700pcs./reel 2sc4135s-tl-e tp-fa 700pcs./reel 2sc4135t-tl-e tp-fa 700pcs./reel v r r l --5v 50v i c =10i b1 = --10i b2 =0.7a (for pnp, the polarity is reversed) + + 50 input output r b 100 f 470 f pw=20 s i b1 i b2 dc 1%
2sa1593/2sc4135 no.2511-3/9 i c -- v ce i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v collector current, i c -- a h fe -- i c h fe -- i c i c -- v be i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- a base-to-emitter voltage, v be -- v collector current, i c -- a collector current, i c -- a dc current gain, h fe collector current, i c -- a dc current gain, h fe i c -- v ce i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v collector current, i c -- a --2.0 --1.6 --1.2 --0.8 --0.4 0 0 --1 --3 -- 2 -- 4 -- 5 --2ma --3ma --1ma --5ma --10ma --30ma --50ma --40ma --20ma i b =0 itr04011 2sa1593 2.0 1.6 1.2 0.8 0.4 0 01 3 245 i b =0 itr04012 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 --10 --30 --20 --40 --50 i b =0 itr04013 2sa1593 1.0 0.8 0.6 0.4 0.2 0 010 30 20 40 50 i b =0 itr04014 2sc4135 1ma 2ma 3ma 5ma 1.0ma 0.5ma 2.0ma 1.5ma 4.5ma 4.0ma 3.5ma 3.0ma 2.5ma 5.0ma 20ma 10ma 40ma 50ma 30ma 2sc4135 --2ma --1ma -- 3 m a --4ma - -5ma --6ma 0 --0.4 --0.8 --1.2 --1.6 --2.0 --2.4 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 itr04015 2sa1593 v ce =--5v ta=75 c 25 c - -25 c 3 5 7 100 2 3 5 7 1000 3 5 7 100 2 3 5 7 1000 72357 --0.01 --0.1 23 23 57 --1.0 itr04017 2sa1593 v ce =--5v 25 c --25 c 0 0.4 0.8 1.2 1.6 2.0 2.4 0 0.2 0.4 0.6 0.8 1.0 1.2 itr04016 2sc4135 v ce =5v ta=75 c 25 c --25 c ta=75 c 72357 0.01 0.1 23 23 57 1.0 itr04018 2sc4135 v ce =5v 25 c --25 c ta=75 c
2sa1593/2sc4135 no.2511-4/9 f t -- i c collector current, i c -- a gain-bandwidth product, f t -- mhz v be (sat) -- i c v be (sat) -- i c v ce (sat) -- i c v ce (sat) -- i c collector current, i c -- a collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v base-to-emitter saturation voltage, v be (sat) -- v collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- v collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- v cob -- v cb collector-to-base voltage, v cb -- v output capacitance, cob -- pf a s o collector-to-emitter voltage, v ce -- v collector current, i c -- a ambient temperature, ta -- c collector dissipation, p c -- w 2 7 5 3 2 7 5 3 --100 --10 --1000 2 735 2 723 3 57 --0.01 --0.1 --1.0 itr04021 2 7 5 3 2 7 5 3 100 10 1000 2sa1593 i c / i b =10 --25 c 25 c ta=75 c 2 735 2 723 3 57 0.01 0.1 1.0 itr04022 2sc4135 i c / i b =10 25 c ta=75 c -- 2 5 c 100 10 0.01 0.1 3 2 2 7 5 3 27 323 5 27 735 1.0 2sa1593 / 2sc4135 v ce =10v itr04019 2sa1593 2sc4135 1000 100 1.0 10 7 5 3 2 7 5 3 22 7 35 27 735 100 itr04020 2sa1593 2sc4135 2sa1593 / 2sc4135 f=1mhz 1.0 0.1 0.01 5 5 3 2 5 5 3 2 3 2 1.0 10 57 2 3 357 100 22 357 0 16 12 14 15 10 8 6 1 4 2 20 060 40 80 100 140 120 160 2sa1593 / 2sc4135 itr04026 itr04025 i cp =3.0a itr04023 3 5 5 3 2 7 7 --1.0 --10 2 73572 2 33 57 --0.01 --0.1 --1.0 2sa1593 i c / i b =10 75 c 25 c ta=--25 c itr04024 3 5 5 3 2 7 7 1.0 10 2 73572 2 33 57 0.01 0.1 1.0 2sc4135 i c / i b =10 75 c 25 c ta=- -25 c dc operation dc operation ta=25 c tc=25 c 100ms 1ms 10ms i c =2.0a 2sa1593 / 2sc4135 tc=25 c single pulse for pnp, minus sign is omitted no heat sink p c -- ta for pnp, minus sign is omitted for pnp, minus sign is omitted
2sa1593/2sc4135 no.2511-5/9 taping speci cation 2sa1593s-tl-e, 2sa1593t-tl-e, 2sc4135s-tl-e, 2sc4135t-tl-e
2sa1593/2sc4135 no.2511-6/9 outline drawing land pattern example 2sa1593s-tl-e, 2sa1593t-tl-e, 2sc4135s-tl-e, 2sc4135t-tl-e mass (g) unit 0.282 * for reference mm unit: mm 7.0 1.5 2.3 2.0 2.5 2.3 7.0
2sa1593/2sc4135 no.2511-7/9 bag packing speci cation 2sa1593s-e, 2sa1593t-e, 2sc4135s-e, 2sc4135t-e
2sa1593/2sc4135 no.2511-8/9 outline drawing 2sa1593s-e, 2sa1593t-e, 2sc4135s-e, 2sc4135t-e mass (g) unit 0.315 * for reference mm
2sa1593/2sc4135 no.2511-9/9 ps this catalog provides information as of august, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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